Terahertz transmitter(Collision avalanche transit time diode)

• Available frequency: 100 GHz，140 GHz
• High power output(80 mW，30mW)
• High stability
• Reduce the line width to1 MHz
• Working current: 150 – 180mA
• Low price
• Compact structure, small size, easy to integrate

Product Description:

TeraSenseSeries terahertz source（IMPATT diodeThe collision avalanche transition time diode is a type of silicon dual drift diode with a transition region0.6umInstalled on a copper radiator. Layered Double Offset Diode: Heavy Doping(p +)Layer, moderately doped（p-）Layer, moderately doped（n-）Layers and heavy doping(n +)Layer.(p +)and(n+)The layer allows Ohmic electrical contacts to make contact with external circuits. The device relies on negative resistance to generate and maintain oscillations.

TeraSenseWe now offer an upgraded version of the collision avalanche transit time diode. The upgraded collision avalanche transit time diode is equipped with a protective isolator, greatly improving the stability of output power. You can choose diodes with fixed horn antennas or diodes with fixed horn antennas as neededWR -The flange. The optimal frequency is100 GHzAt this time, the typical output power can reach100mW.

Specification parameters:

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