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Microwave Materials Science Workstation - Microwave Plasma Chemical Vapor Deposition System
This system can be used as both traditional chemical vapor deposition equipment and microwave energy chemical vapor deposition equipment, as well as m
Product details
Microwave Materials Science Workstation - Microwave Plasma Chemical Vapor Deposition System
Main purpose:
This system can be used as both traditional chemical vapor deposition equipment and microwave energy chemical vapor deposition equipment, as well as microwave plasma chemical vapor deposition equipment
★ Mainly applied in the fields of semiconductors, large-scale insulation materials, most metal materials and metal alloy materials, new materials and processes such as graphene, nanomaterials, carbon fibers, silicon carbide, coating, etc
This product has excellent properties such as high ionization, high electron temperature and electron density, wide applicable pressure range, and no internal electrode contamination. Microwave plasma is used for material surface treatment, diamond film preparation
Chemical vapor deposition, etching and methane conversion to hydrogen, long afterglow luminescent materials, ceramic sintering, carbon nanotube modification [3], nano powder synthesis, water pollution treatment and other fields
Product features:
★The design of a vertical reactor can achieve high plasma density; A symmetrical microwave generator device that produces a more uniform plasma environment
★There are no internal electrodes inside the resonant cavity, which can avoid pollution caused by electrode discharge. Moreover, its operating pressure range is relatively wide, resulting in high plasma density and large area,
High stability and no contact with the vacuum chamber, thus avoiding contamination of the film by the chamber wall
★Easy to operate:The gas path connection method adopts KF quick connection flange structure, which simplifies the process of picking up and placing materials. Only one clamp is needed to complete the gas path connection, which is convenient for operation,
Cancelled the complex flange installation process, reducing damage caused by installation
★multi-function:Four heating methods are available: microwave plasma, pure microwave, traditional electric heating, and hybrid heating; Adapt to heat treatment of any non flammable sample, including metals and alloys
★Dual temperature zone structure:Upper plasma zone or heating zone, lower sample stage heating zone
★Exclusive developed microwave field specific sensor for precise temperature control
★Safety:Exclusive use of interlocking protection shielding measures to prevent leakage, safe and reliable microwave shielding cavity design, multiple anti leakage protections
*Equipped with professional microwave suppressors as standard
*Built in microwave leakage sensor
★Energy saving:Long service life: Magnetron microwave heating avoids and solves the problem of traditional heating elements such as heating wires, silicon carbon rods, and silicon molybdenum rods being easily damaged, and also avoids the problem of heating elements being damaged
Various losses caused by damage, including time, experimental progress, repair costs, etc
★ Adopting stepless adjustability, high stability and long service lifeContinuous wave micro wave sourceEnsure that the equipment can operate continuously and stably for a long time
★Embedded microcomputer integrated temperature control system; Realize stable temperature control
★ No need for oven drying process: The entire furnace chamber generates heat by itself, and the heating is uniform
★ Microwave energy is available immediately, without thermal inertia, and easy to control temperature
★ Equipped with swivel wheel adjustable feet for easy movement and fixation
Technical parameters:
Optional features:
Quality flow control system; Alicat Quality Flow&Controller from the United States





Main purpose:
This system can be used as both traditional chemical vapor deposition equipment and microwave energy chemical vapor deposition equipment, as well as microwave plasma chemical vapor deposition equipment
★ Mainly applied in the fields of semiconductors, large-scale insulation materials, most metal materials and metal alloy materials, new materials and processes such as graphene, nanomaterials, carbon fibers, silicon carbide, coating, etc
This product has excellent properties such as high ionization, high electron temperature and electron density, wide applicable pressure range, and no internal electrode contamination. Microwave plasma is used for material surface treatment, diamond film preparation
Chemical vapor deposition, etching and methane conversion to hydrogen, long afterglow luminescent materials, ceramic sintering, carbon nanotube modification [3], nano powder synthesis, water pollution treatment and other fields
Product features:
★The design of a vertical reactor can achieve high plasma density; A symmetrical microwave generator device that produces a more uniform plasma environment
★There are no internal electrodes inside the resonant cavity, which can avoid pollution caused by electrode discharge. Moreover, its operating pressure range is relatively wide, resulting in high plasma density and large area,
High stability and no contact with the vacuum chamber, thus avoiding contamination of the film by the chamber wall
★Easy to operate:The gas path connection method adopts KF quick connection flange structure, which simplifies the process of picking up and placing materials. Only one clamp is needed to complete the gas path connection, which is convenient for operation,
Cancelled the complex flange installation process, reducing damage caused by installation
★multi-function:Four heating methods are available: microwave plasma, pure microwave, traditional electric heating, and hybrid heating; Adapt to heat treatment of any non flammable sample, including metals and alloys
★Dual temperature zone structure:Upper plasma zone or heating zone, lower sample stage heating zone
★Exclusive developed microwave field specific sensor for precise temperature control
★Safety:Exclusive use of interlocking protection shielding measures to prevent leakage, safe and reliable microwave shielding cavity design, multiple anti leakage protections
*Equipped with professional microwave suppressors as standard
*Built in microwave leakage sensor
★Energy saving:Long service life: Magnetron microwave heating avoids and solves the problem of traditional heating elements such as heating wires, silicon carbon rods, and silicon molybdenum rods being easily damaged, and also avoids the problem of heating elements being damaged
Various losses caused by damage, including time, experimental progress, repair costs, etc
★ Adopting stepless adjustability, high stability and long service lifeContinuous wave micro wave sourceEnsure that the equipment can operate continuously and stably for a long time
★Embedded microcomputer integrated temperature control system; Realize stable temperature control
★ No need for oven drying process: The entire furnace chamber generates heat by itself, and the heating is uniform
★ Microwave energy is available immediately, without thermal inertia, and easy to control temperature
★ Equipped with swivel wheel adjustable feet for easy movement and fixation
Technical parameters:
| Model/model | WBDQC-4 | |
| Heatable material | Any material that is not flammable or explosive | |
| microwave frequency | 2.45GHZ±50MHz | |
| Heating method | Plasma heating, pure microwave heating, traditional electric heating, mixed heating | |
| Maximum power/KW (continuous, adjustable) | 4 | |
| Sample cavity length | Standard 100mm can be customized according to user needs | |
| Heating sample chamber (material) | Quartz tube (microwave plasma working mode) | Quartz tube&corundum tube (other heating methods) |
| Temperature control range/℃ | 1100 ℃ quartz sample cavity diameter: available in Φ 45mm, Φ 60mm, and Φ 100mm; | 1500 ℃ corundum sample cavity diameter: optional for Φ 45mm and Φ 60mm; |
| Temperature testing component | Microwave field specific sensor | |
| Temperature resolution/℃ | 0.1 | |
| Maximum temperature range of sample stage | Room temperature -1200 ℃, optional for higher temperatures | |
| Temperature control accuracy/℃ |
± 1 below 1200 ℃; Above 1200 ℃ ± 2 ℃ |
|
| Temperature deviation/℃ | ||
| Temperature stability fluctuation/℃ | ||
| Cooling method | forced air cooling | |
| Length of constant temperature zone/mm | Standard 100mm can be customized according to user needs | |
| Heating rate (standard) | 0-200 ℃/min (excluding microwave plasma working mode) Arbitrary setting, programmable, segmented heating |
|
| Temperature control method | 10 segments with adjustable process parameters, 7-inch touch screen operation, and data storage function; Provide manual, automatic, and constant temperature control modes, with real-time curve display | |
| control gas | Control gases: H2, CH4, Ar, N2, other gases optional | |
| flow control | Standard configuration includes 2 sets of quality flow controllers: Seven Star Huachuang (with vacuum protection valve at the rear, matched with vacuum mode); Accuracy: 0.8% | |
| Maximum withstand voltage | 1MPa; Control response time: 10ms | |
| Vacuum system vacuum pump | RVP2008; Pressure range: 10-3 Torr~760 Torr Maximum pumping speed: 8.5m3/h |
|
| vacuum gauge | Digital vacuum gauge: 1atm-10-1 Pa | |
| standard configuration | The quality flow automatic control system is equipped with a control computer and control software, which can display and save growth parameters in real-time | |
| Other configurations of the gas path | Gas cabinets, gas circuits, and valves, etc | |
| port | Stainless steel KF50 flange interface | |
| Power supply voltage (V) | 220 | |
| Microwave leakage rate/mW/cm2 | ≤0.4 | |
| Dimensions (length, width, height)/mm | 1100×750×1900 | |
Optional features:
Quality flow control system; Alicat Quality Flow&Controller from the United States





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